| PART |
Description |
Maker |
| AZT711301 AZT71MG |
Programmable Capacitive Tuning IC
Programmable Capacitive Tuning IC
|
Arizona Microtek, Inc
|
| EKT2101 |
Capacitive Capacitive Touch Sensor Controller
|
ELAN Microelectronics
|
| BBY51-03W BBY5103W Q62702-B663 |
ER 9C 6#16 3#12 PIN RECP BOX
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY55 BBY55-02V BBY55-03W BBY55-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diodes
|
INFINEON[Infineon Technologies AG]
|
| Q62702-B918 BBY57-03W BBY5703W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
From old datasheet system
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| EXO-3 EXO-3-12.288M EXO-3-14.31818M EXO-3-14.7456M |
CRYSTAL OSCILLATOR FOR uPs WITH PROGRAMMBLE OUTPUT
AC Motorized Impeller; Series:Diplomat 与晶体振荡器的可编程输出断电
Crystal oscillator for uPs with programmable output, 12.288MHz
Crystal oscillator for uPs with programmable output, 14.31818MHz
Crystal oscillator for uPs with programmable output, 14.7456MHz
Crystal oscillator for uPs with programmable output, 14.9105MHz
Crystal oscillator for uPs with programmable output, 15.9744MHz
Crystal oscillator for uPs with programmable output, 16.128MHz
Crystal oscillator for uPs with programmable output, 16.257MHz
Crystal oscillator for uPs with programmable output, 16.384MHz
Crystal oscillator for uPs with programmable output, 19.0909MHz
Crystal oscillator for uPs with programmable output, 18.432MHz
Crystal oscillator for uPs with programmable output, 17.73447MHz
Crystal oscillator for uPs with programmable output, 19.6608MHz
Crystal oscillator for uPs with programmable output, 21.47727MHz
Crystal oscillator for uPs with programmable output, 22.1184MHz
Crystal oscillator for uPs with programmable output, 24.576MHz
|
Wolfgang Knap Ges.m.b.H. . Co. KG
Wolfgang Knap Ges.m.n.H.
WK[Wolfgang Knap]
|
| AS1716-ASOT |
Capacitive Sensor Interface
|
austriamicrosystems AG
|
